IGBT

A bi-polar transistor with an insulated port or IGBT is in a semiconductor power category and is used as an electronic switch that is used in new devices to increase efficiency and accelerate in switching.
Semikron IGBT Models:
SKiiP 38NAB12T4V1 , SKiiP 24NAB12T4V1 , SKiiP 12NAB126V , SKiiP 03NEC066V3 , SKiiP 02NEC066V3

The IGBT transistor combines the best parts of the two common transistors, the BJT and the MOSFET. In effect, the large input impedance and high switching speed of the MOSFET and the low saturation voltage of the BJT are combined to create another type of transistor called the IGBT, which is capable of operating at high collector-emitter currents with a gate voltage of almost zero.

What is an IGBT?

An IGBT, or insulated gate bipolar transistor (IGBT), is a power semiconductor and is used as an electronic switch in new devices to increase efficiency and speed up switching.

The Semiconductor IGBT, as its name suggests, combines the insulated gate technology of the MOSFET with the characteristics of a conventional bipolar transistor. The result is the output switching and conduction characteristics of a bipolar transistor, but like a MOSFET, its voltage is controlled.

The most prominent applications of IGBTs:

IGBTs are widely used in power electronics applications such as inverters, converters, and power supplies that require solid-state switching components where MOSFETs and BJTs are not efficient. High-voltage, high-current bipolar transistors are available, but their switching speed is slow. On the other hand, although the switching speed of power MOSFETs is faster, their high-voltage, high-current components are expensive.

An insulated-gate bipolar transistor has higher power efficiency than a standard bipolar transistor. It also has the ability to operate at higher voltages and lower input losses. From a functional point of view, an IGBT is a FET combined with a bipolar transistor to form a Darlington configuration.